Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

Crystal Growth and Luminescence Properties of TbGa3(BO3)4 Crystals

TbGa 3 (BO 3 ) 4 crystals were grown using the Bi 2 Mo 3 O 12 :B 2 O 3 :Tb 2 O 3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R 32 space group with unit cell parameters: a  = 9.4512(4) Å, c  = 7.4532(2) Å. A strong green emission of th...

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Veröffentlicht in:Journal of structural chemistry 2024-04, Vol.65 (4), p.693-700
Hauptverfasser: Rakhmanova, M. I., Kokh, K. A., Kononova, N. G., Kuznetsov, A. B.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Atomic
Atomic/Molecular Structure and Spectra
Boron oxides
Chemistry
Chemistry and Materials Science
Crystal growth
Inorganic Chemistry
Luminescence
Molecular
Optical and Plasma Physics
Optical properties
Physical Chemistry
Solid State Physics
Unit cell
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Zusammenfassung:TbGa 3 (BO 3 ) 4 crystals were grown using the Bi 2 Mo 3 O 12 :B 2 O 3 :Tb 2 O 3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R 32 space group with unit cell parameters: a  = 9.4512(4) Å, c  = 7.4532(2) Å. A strong green emission of the luminescence is primarily dominated by the 5 D 4 to 7 F 5 transition in Tb 3+ . Annealing these crystals in a hydrogen atmosphere at 800 °C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.
ISSN:0022-4766
1573-8779
DOI:10.1134/S0022476624040061