High-Performance PbS NCs-graphene phototransistor with memory function

High-Performance PbS NCs-graphene phototransistor with memory function

A high-performance lead sulfide (PbS) NCs/graphene hetero-junction based phototransistor was reported. The device exhibited NIR response with a responsivity of 33 A/W, detectivity of 2.2×10 8 Jones, external quantum efficiency of 5×10 3 % and fast response time of 16 ms at 808 nm under room temperat...

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Veröffentlicht in:IEEE photonics technology letters 2024-06, Vol.36 (11), p.1-1
Hauptverfasser: Che, Y.L., Cao, X.L., Yao, J.Q.
Format: Artikel
Sprache:eng
Schlagworte:
Energy bands
Graphene
Graphene oxide
Lead
Lead sulfides
Lighting
Logic gates
PbS NCs
Phototransistor
Phototransistors
Quantum efficiency
Room temperature
Silicon
Time factors
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Zusammenfassung:A high-performance lead sulfide (PbS) NCs/graphene hetero-junction based phototransistor was reported. The device exhibited NIR response with a responsivity of 33 A/W, detectivity of 2.2×10 8 Jones, external quantum efficiency of 5×10 3 % and fast response time of 16 ms at 808 nm under room temperature. In addition, the phototransistor exhibited good memory function by introducing graphene oxide storage layer. The mechanism of the device has been discussed using the energy band diagrams of the hetero-structured PbS NCs/graphene.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2024.3397011