Silicon photonics-based high-energy passively Q-switched laser

Chip-scale, high-energy optical pulse generation is becoming increasingly important as integrated optics expands into space and medical applications where miniaturization is needed. Q -switching of the laser cavity was historically the first technique to generate high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fibre lasers, especially in the long wavelength range >1.8 µm, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement that enables a small form factor becomes an impediment to high-energy applications owing to small optical mode cross-sections. Here we demonstrate a high-energy silicon photonics-based passively Q -switched laser with a compact footprint using a rare-earth gain-based large-mode-area waveguide. We demonstrate high on-chip output pulse energies of >150 nJ and 250 ns pulse duration in a single transverse fundamental mode in the retina-safe spectral region (1.9 µm), with a slope efficiency of ~40% in a footprint of ~9 mm 2 . The high-energy pulse generation demonstrated in this work is comparable to or in many cases exceeds that of Q -switched fibre lasers. This bodes well for field applications in medicine and space. An integrated high-energy laser that combines a passively Q -switched laser cavity based on a silicon-nitride photonic integrated circuit with an optically pumped gain layer consisting of thulium-doped alumina is reported, representing a pivotal advancement in integrated pulsed lasers.