Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

We report on the microstructure of high Al content (0.65

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Veröffentlicht in:	Journal of electronic materials 2024-06, Vol.53 (6), p.2789-2797
Hauptverfasser:	Sarney, Wendy L., Ji, Mihee, Leff, Asher C., Larkin, LeighAnn S., Garrett, Gregory A., Sampath, Anand V., Wraback, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	65th Electronic Materials Conference 2023 Aluminum Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Epitaxial growth Heat resistant alloys Heterostructures High temperature plasmas Image contrast Image transmission Instrumentation Materials Science Molecular beam epitaxy Morphology Optical and Electronic Materials Optical properties Organic chemicals Oscillations Periodic structures Plasma Satellite communications Semiconductors Solid State Physics Temperature Topical Collection: 65th Electronic Materials Conference 2023 Transmission electron microscopy
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Beschreibung
Zusammenfassung:	We report on the microstructure of high Al content (0.65
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-024-10952-x