Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity regio...

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Veröffentlicht in:Russian microelectronics 2024-02, Vol.53 (1), p.44-50
Hauptverfasser: Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
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container_issue 1
container_start_page 44
container_title Russian microelectronics
container_volume 53
creator Golikov, O. L.
Zabavichev, I. Yu
Ivanov, A. S.
Obolensky, S. V.
Obolenskaya, E. S.
Paveliev, D. G.
Potekhin, A. A.
Puzanov, A. S.
Tarasova, E. A.
Khazanova, S. V.
description A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.
doi_str_mv 10.1134/S1063739723600334
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subjects Bipolar transistors
Current voltage characteristics
Electrical Engineering
Electron transport
Emitters
Engineering
Semiconductor devices
Superlattices
title Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
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