Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity regio...
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Veröffentlicht in: | Russian microelectronics 2024-02, Vol.53 (1), p.44-50 |
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creator | Golikov, O. L. Zabavichev, I. Yu Ivanov, A. S. Obolensky, S. V. Obolenskaya, E. S. Paveliev, D. G. Potekhin, A. A. Puzanov, A. S. Tarasova, E. A. Khazanova, S. V. |
description | A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations. |
doi_str_mv | 10.1134/S1063739723600334 |
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L. ; Zabavichev, I. Yu ; Ivanov, A. S. ; Obolensky, S. V. ; Obolenskaya, E. S. ; Paveliev, D. G. ; Potekhin, A. A. ; Puzanov, A. S. ; Tarasova, E. A. ; Khazanova, S. V.</creator><creatorcontrib>Golikov, O. L. ; Zabavichev, I. Yu ; Ivanov, A. S. ; Obolensky, S. V. ; Obolenskaya, E. S. ; Paveliev, D. G. ; Potekhin, A. A. ; Puzanov, A. S. ; Tarasova, E. A. ; Khazanova, S. V.</creatorcontrib><description>A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739723600334</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Bipolar transistors ; Current voltage characteristics ; Electrical Engineering ; Electron transport ; Emitters ; Engineering ; Semiconductor devices ; Superlattices</subject><ispartof>Russian microelectronics, 2024-02, Vol.53 (1), p.44-50</ispartof><rights>Pleiades Publishing, Ltd. 2024. 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It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.</description><subject>Bipolar transistors</subject><subject>Current voltage characteristics</subject><subject>Electrical Engineering</subject><subject>Electron transport</subject><subject>Emitters</subject><subject>Engineering</subject><subject>Semiconductor devices</subject><subject>Superlattices</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kE9Lw0AQxRdRsFY_gLeA5-hM9k-2Ry21ChUPreewbCY2Jc3G3S3it3dLBA_iaYZ5v_cGHmPXCLeIXNytERQv-awsuALgXJywCSrQORcoT9Oe5Pyon7OLEHYACKDUhL0sOrLRuz7beNOHwfmYtX1msod2cJ3x47kN0fnss43bpKwPA_nOxNhaOrJxS9li38ZI_pKdNaYLdPUzp-ztcbGZP-Wr1-Xz_H6VW9Rc5IXUtiGy0BDOmlrLkmwtSWkNhhSgMqWGGgDIqpoKayUUSCgaUwjkxPmU3Yy5g3cfBwqx2rmD79PLioMEpYXEWaJwpKx3IXhqqsG3e-O_KoTq2Fr1p7XkKUZPSGz_Tv43-X_TNwnsbe8</recordid><startdate>20240201</startdate><enddate>20240201</enddate><creator>Golikov, O. 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subjects | Bipolar transistors Current voltage characteristics Electrical Engineering Electron transport Emitters Engineering Semiconductor devices Superlattices |
title | Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
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