Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity regio...

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Veröffentlicht in:Russian microelectronics 2024-02, Vol.53 (1), p.44-50
Hauptverfasser: Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Current voltage characteristics
Electrical Engineering
Electron transport
Emitters
Engineering
Semiconductor devices
Superlattices
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Beschreibung
Zusammenfassung:A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739723600334