Ultra-large Silicon Diode for Characterising Low-intensity Radiation Environments

We present applications of a large commercial silicon diode (50 cm 2 x 500 um) for monitoring low-intensity radiation fields, together with benchmarks via Monte Carlo simulations. After the energy calibration with monoenergetic proton and alpha beams in the 2-8 MeV range, we show that the detector i...

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Veröffentlicht in:IEEE transactions on nuclear science 2024-04, Vol.71 (4), p.1-1
Hauptverfasser: Bilko, Kacper, Alia, Ruben Garcia, Girard, Sylvain, Barbero, Mario Sacristan, Cecchetto, Matteo, Belanger-Champagne, Camille, Brucoli, Matteo, Danzeca, Salvatore, Hands, Alex, Holgado, Pedro Martin, Garcia, Yolanda Morilla, Maestre, Amor Romero, Sebban, Marc, Widorski, Markus
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Sprache:eng
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Zusammenfassung:We present applications of a large commercial silicon diode (50 cm 2 x 500 um) for monitoring low-intensity radiation fields, together with benchmarks via Monte Carlo simulations. After the energy calibration with monoenergetic proton and alpha beams in the 2-8 MeV range, we show that the detector is capable of measuring atmospheric radiation at the ground level, not only in terms of a total number of events but also through their energy deposition distribution. Focusing on the atmospheric-like neutron spectrum, we prove that the diode detection cross-section is more than 5 orders of magnitude larger with respect to SRAM-based solutions, and highlight the potential use cases in the accelerator's radiation environment.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2023.3337839