Heavy-Ion-Induced Displacement Damage Effects on WO x ECRAM

Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of ~1011 cm−2), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (1011 cm−2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.