Redox Gating for Colossal Carrier Modulation and Unique Phase Control (Adv. Mater. 16/2024)

Redox Gating In article number 2308871, Matthew V. Tirrell, Hua Zhou, Wei Chen, and their co‐workers introduce redox gating, a novel method for manipulating carriers and controlling the electronic state within the sub‐volt range. This innovative approach involves generating a significant number of f...

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Veröffentlicht in:	Advanced materials (Weinheim) 2024-04, Vol.36 (16), p.n/a
Hauptverfasser:	Zhang, Le, Liu, Changjiang, Cao, Hui, Erwin, Andrew J., Fong, Dillon D., Bhattacharya, Anand, Yu, Luping, Stan, Liliana, Zou, Chongwen, Tirrell, Matthew V., Zhou, Hua, Chen, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	carrier modulation electron injection Electron states metal‐insulator transition Perovskites Phase control redox gating Thin films transistor
Online-Zugang:	Volltext
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