Redox Gating for Colossal Carrier Modulation and Unique Phase Control (Adv. Mater. 16/2024)

Redox Gating In article number 2308871, Matthew V. Tirrell, Hua Zhou, Wei Chen, and their co‐workers introduce redox gating, a novel method for manipulating carriers and controlling the electronic state within the sub‐volt range. This innovative approach involves generating a significant number of free carriers within the redox gating medium, which are then injected into the adjacent perovskite thin film. Notably, this injection induces substantial changes in the electronic state at low gate voltages, all without generating defects. The green threads depicted in the illustration represent the functional molecules used for redox gating. By offering a means to manipulate the electronic properties of various materials at low power levels, ranging from traditional semiconductors to complex, strongly correlated systems, redox gating holds promise for mimicking the synaptic switching observed in the human brain, as represented by the underlying synapse, and enhancing reconfigurable quantum devices.