Silicon Radical‐Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface (Small 16/2024)

Silicon Radical‐Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface (Small 16/2024)

Graphene Frameworks In article number 2306325, Zheng‐Ze Pan, Devis Di Tommaso, Hirotomo Nishihara, and co‐workers tackle the surface inertness of SiO2 on graphene coating over chemical vapor deposition via the pre‐grafting of trimethyl silane (TMS) groups on the pristine SiO2 surface. TMS‐grafted Si...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-04, Vol.20 (16), p.n/a
Hauptverfasser: Pirabul, Kritin, Zhao, Qi, Pan, Zheng‐Ze, Liu, Hongyu, Itoh, Mutsuhiro, Izawa, Kenichi, Kawai, Makoto, Crespo‐Otero, Rachel, Di Tommaso, Devis, Nishihara, Hirotomo
Format: Artikel
Sprache:eng
Schlagworte:
carbon templating
CH4 activation
Chemical vapor deposition
Graphene
Methane
Silicon dioxide
silicon radical
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Zusammenfassung:Graphene Frameworks In article number 2306325, Zheng‐Ze Pan, Devis Di Tommaso, Hirotomo Nishihara, and co‐workers tackle the surface inertness of SiO2 on graphene coating over chemical vapor deposition via the pre‐grafting of trimethyl silane (TMS) groups on the pristine SiO2 surface. TMS‐grafted SiO2 facilitates the graphene growth via the in‐situ formed Si radicals that catalyze CH4 dissociation. This provides insights on the graphene growth chemistries, promoting the synthesis of tailored graphene‐based materials.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202470125