Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO
The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm ha...
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Veröffentlicht in: | Crystallography reports 2024-02, Vol.69 (1), p.109-113 |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have been investigated by total current spectroscopy using a probe electron beam. The experimental dependences have been analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by the method of density functional theory (DFT). |
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ISSN: | 1063-7745 1562-689X |
DOI: | 10.1134/S1063774523601223 |