Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO

The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm ha...

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Veröffentlicht in:Crystallography reports 2024-02, Vol.69 (1), p.109-113
Hauptverfasser: Komolov, A. S., Lazneva, E. F., Sobolev, V. S., Pshenichnyuk, S. A., Asfandiarov, N. L., Zhizhin, E. V., Pudikov, D. A., Dubov, E. A., Pronin, I. A., Akbarova, F. Dj, Sharopov, U. B.
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Sprache:eng
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Zusammenfassung:The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have been investigated by total current spectroscopy using a probe electron beam. The experimental dependences have been analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by the method of density functional theory (DFT).
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774523601223