Characterization of ion-sensitive field effect transistor by varying channel length for different gate oxide thickness

Characterization of ion-sensitive field effect transistor by varying channel length for different gate oxide thickness

In this age of nano-technology field effect transistors are widely used in semiconductor devices. ISFET has huge application in biological field due to its speedy response and high sensitivity. In this paper a simulation of ISFET has been done using the ENBIOS-2D tool. Types of ISFET based on its us...

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Hauptverfasser: Sen, Suchismita, Chakraborty, Pinaki, Sarkar, Argha
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Field effect transistors
Semiconductor devices
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Sarkar, Argha
description In this age of nano-technology field effect transistors are widely used in semiconductor devices. ISFET has huge application in biological field due to its speedy response and high sensitivity. In this paper a simulation of ISFET has been done using the ENBIOS-2D tool. Types of ISFET based on its uses are discussed. Development of ISFET in several years is mentioned. Mainly Variation of characteristic curves with varying channel width is examined and described.
doi_str_mv 10.1063/5.0205264
format Conference Proceeding
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subjects Field effect transistors
Semiconductor devices
title Characterization of ion-sensitive field effect transistor by varying channel length for different gate oxide thickness
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