Characterization of ion-sensitive field effect transistor by varying channel length for different gate oxide thickness

In this age of nano-technology field effect transistors are widely used in semiconductor devices. ISFET has huge application in biological field due to its speedy response and high sensitivity. In this paper a simulation of ISFET has been done using the ENBIOS-2D tool. Types of ISFET based on its uses are discussed. Development of ISFET in several years is mentioned. Mainly Variation of characteristic curves with varying channel width is examined and described.