Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration

Emerging GaN high electron mobility transistors have become a popular choice in high-efficiency, high-speed power circuits, owing to superb switching figure of merits. However, as a new type of power devices, aging/failure mechanisms of such are far less studied than silicon counterparts, making rel...

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Veröffentlicht in:	IEEE transactions on power electronics 2024-05, Vol.39 (5), p.6215-6224
Hauptverfasser:	Yan, Dong, Ma, D. Brian
Format:	Artikel
Sprache:	eng
Schlagworte:	Aging precursor Calibration Condition monitoring Current measurement dynamic on-resistance Electric bridges Electronic devices Errors Failure mechanisms Feedback control gallium nitride (GaN) power device Gallium nitrides High electron mobility transistors Integrated circuits Mass production on-chip full profile scan and offset calibration online condition monitoring Power converters Power management Semiconductor device measurement Semiconductor devices Sensors Silicon Switches Switching Voltage measurement
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