10¹²) for FeRAM Applications
70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2024-01, Vol.45 (4), p.578 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 4 |
| container_start_page | 578 |
| container_title | IEEE electron device letters |
| container_volume | 45 |
| creator | Walke, Amey M Popovici, Mihaela I Sharifi, Shamin H Demir, Eyup C Harinarayanan Puliyalil Bizindavyi, Jasper Yasin, Farrukh Clima, Sergiu Fantini, Andrea Belmonte, Attilio Kar, Gouri S Houdt, Jan V |
| description | 70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications. |
| doi_str_mv | 10.1109/LED.2024.3368225 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2995147420</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2995147420</sourcerecordid><originalsourceid>FETCH-proquest_journals_29951474203</originalsourceid><addsrcrecordid>eNpjYJAwNNAzNDSw1PdxddEzMjAy0TM2NrMwMjJlYuA0NDW10DUwNTNmYeA0MDcx1DU2NDDjYOAqLs4yMDA0MTE34WSQMzQ4tPPQJk2FtPwiBbfUIEdfBceCgpzM5MSSzPy8Yh4G1rTEnOJUXijNzaDs5hri7KFbUJRfWJpaXBKflV9alAeUijeytDQ1BJppZGBMnCoA2LEyzQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2995147420</pqid></control><display><type>article</type><title>10¹²) for FeRAM Applications</title><source>IEEE Electronic Library (IEL)</source><creator>Walke, Amey M ; Popovici, Mihaela I ; Sharifi, Shamin H ; Demir, Eyup C ; Harinarayanan Puliyalil ; Bizindavyi, Jasper ; Yasin, Farrukh ; Clima, Sergiu ; Fantini, Andrea ; Belmonte, Attilio ; Kar, Gouri S ; Houdt, Jan V</creator><creatorcontrib>Walke, Amey M ; Popovici, Mihaela I ; Sharifi, Shamin H ; Demir, Eyup C ; Harinarayanan Puliyalil ; Bizindavyi, Jasper ; Yasin, Farrukh ; Clima, Sergiu ; Fantini, Andrea ; Belmonte, Attilio ; Kar, Gouri S ; Houdt, Jan V</creatorcontrib><description>70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2024.3368225</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Polarization</subject><ispartof>IEEE electron device letters, 2024-01, Vol.45 (4), p.578</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Walke, Amey M</creatorcontrib><creatorcontrib>Popovici, Mihaela I</creatorcontrib><creatorcontrib>Sharifi, Shamin H</creatorcontrib><creatorcontrib>Demir, Eyup C</creatorcontrib><creatorcontrib>Harinarayanan Puliyalil</creatorcontrib><creatorcontrib>Bizindavyi, Jasper</creatorcontrib><creatorcontrib>Yasin, Farrukh</creatorcontrib><creatorcontrib>Clima, Sergiu</creatorcontrib><creatorcontrib>Fantini, Andrea</creatorcontrib><creatorcontrib>Belmonte, Attilio</creatorcontrib><creatorcontrib>Kar, Gouri S</creatorcontrib><creatorcontrib>Houdt, Jan V</creatorcontrib><title>10¹²) for FeRAM Applications</title><title>IEEE electron device letters</title><description>70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.</description><subject>Polarization</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpjYJAwNNAzNDSw1PdxddEzMjAy0TM2NrMwMjJlYuA0NDW10DUwNTNmYeA0MDcx1DU2NDDjYOAqLs4yMDA0MTE34WSQMzQ4tPPQJk2FtPwiBbfUIEdfBceCgpzM5MSSzPy8Yh4G1rTEnOJUXijNzaDs5hri7KFbUJRfWJpaXBKflV9alAeUijeytDQ1BJppZGBMnCoA2LEyzQ</recordid><startdate>20240101</startdate><enddate>20240101</enddate><creator>Walke, Amey M</creator><creator>Popovici, Mihaela I</creator><creator>Sharifi, Shamin H</creator><creator>Demir, Eyup C</creator><creator>Harinarayanan Puliyalil</creator><creator>Bizindavyi, Jasper</creator><creator>Yasin, Farrukh</creator><creator>Clima, Sergiu</creator><creator>Fantini, Andrea</creator><creator>Belmonte, Attilio</creator><creator>Kar, Gouri S</creator><creator>Houdt, Jan V</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20240101</creationdate><title>10¹²) for FeRAM Applications</title><author>Walke, Amey M ; Popovici, Mihaela I ; Sharifi, Shamin H ; Demir, Eyup C ; Harinarayanan Puliyalil ; Bizindavyi, Jasper ; Yasin, Farrukh ; Clima, Sergiu ; Fantini, Andrea ; Belmonte, Attilio ; Kar, Gouri S ; Houdt, Jan V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_29951474203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Polarization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Walke, Amey M</creatorcontrib><creatorcontrib>Popovici, Mihaela I</creatorcontrib><creatorcontrib>Sharifi, Shamin H</creatorcontrib><creatorcontrib>Demir, Eyup C</creatorcontrib><creatorcontrib>Harinarayanan Puliyalil</creatorcontrib><creatorcontrib>Bizindavyi, Jasper</creatorcontrib><creatorcontrib>Yasin, Farrukh</creatorcontrib><creatorcontrib>Clima, Sergiu</creatorcontrib><creatorcontrib>Fantini, Andrea</creatorcontrib><creatorcontrib>Belmonte, Attilio</creatorcontrib><creatorcontrib>Kar, Gouri S</creatorcontrib><creatorcontrib>Houdt, Jan V</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Walke, Amey M</au><au>Popovici, Mihaela I</au><au>Sharifi, Shamin H</au><au>Demir, Eyup C</au><au>Harinarayanan Puliyalil</au><au>Bizindavyi, Jasper</au><au>Yasin, Farrukh</au><au>Clima, Sergiu</au><au>Fantini, Andrea</au><au>Belmonte, Attilio</au><au>Kar, Gouri S</au><au>Houdt, Jan V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>10¹²) for FeRAM Applications</atitle><jtitle>IEEE electron device letters</jtitle><date>2024-01-01</date><risdate>2024</risdate><volume>45</volume><issue>4</issue><spage>578</spage><pages>578-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><abstract>70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2024.3368225</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2024-01, Vol.45 (4), p.578 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_2995147420 |
| source | IEEE Electronic Library (IEL) |
| subjects | Polarization |
| title | 10¹²) for FeRAM Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T05%3A36%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=10%C2%B9%C2%B2)%20for%20FeRAM%20Applications&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Walke,%20Amey%20M&rft.date=2024-01-01&rft.volume=45&rft.issue=4&rft.spage=578&rft.pages=578-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2024.3368225&rft_dat=%3Cproquest%3E2995147420%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2995147420&rft_id=info:pmid/&rfr_iscdi=true |