10¹²) for FeRAM Applications

70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2024-01, Vol.45 (4), p.578
Hauptverfasser:	Walke, Amey M, Popovici, Mihaela I, Sharifi, Shamin H, Demir, Eyup C, Harinarayanan Puliyalil, Bizindavyi, Jasper, Yasin, Farrukh, Clima, Sergiu, Fantini, Andrea, Belmonte, Attilio, Kar, Gouri S, Houdt, Jan V
Format:	Artikel
Sprache:	eng
Schlagworte:	Polarization
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to be limited by the imprint effect. Our demonstration brings HZO based FE capacitors one step closer to nonvolatile FeRAM applications.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2024.3368225