Operating Temperature Dependency of Power Generation Capacity in Silicon Planar-Integrated Microthermoelectric Generators

In this study, we developed a silicon-integrated microthermoelectric generator ( \mu -TEG) based on standard silicon CMOS technology and featuring a cavity-free architecture. Subsequently, we investigated the dependency of its power generation capacity on the operating temperature, by measuring the...

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Veröffentlicht in:IEEE transactions on electron devices 2024-04, Vol.71 (4), p.1-7
Hauptverfasser: Hoshina, Takumi, Tomita, Motohiro, Matsuki, Takeo, Watanabe, Takanobu
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Sprache:eng
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Zusammenfassung:In this study, we developed a silicon-integrated microthermoelectric generator ( \mu -TEG) based on standard silicon CMOS technology and featuring a cavity-free architecture. Subsequently, we investigated the dependency of its power generation capacity on the operating temperature, by measuring the output power across a range of temperatures, from 23 ^{\circ} C to 43 ^{\circ} C. The maximum output power increased as the operating temperature rose. At 43 ^{\circ} C, the output power was more than twice at 23 ^{\circ} C. This power enhancement can be attributed to the increase in the Seebeck coefficient and the decrease in the thermal conductivity of silicon at higher temperatures, which more than compensates for the rise in the internal electrical resistance of the device. Considering potential applications of silicon planar integrated thermoelectric generators (TEGs), such as ON-chip micro-cooling devices and heat flux sensors, this power enhancement in high-temperature environments is an advantageous result.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3362770