Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures

MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.