Zinc‐Imidazolate Films as an All‐Dry Resist Technology (Adv. Funct. Mater. 12/2024)

Zinc‐Imidazolate Films In article number 2311149, Michael Tsapatsis, D. Howard Fairbrother, and co‐workers report an all‐dry resist technology based on an amorphous zinc imidazolate metal‐organic framework deposited by atomic/molecular layer deposition and developed by low temperature gas phase etch...

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Veröffentlicht in:	Advanced functional materials 2024-03, Vol.34 (12), p.n/a
Hauptverfasser:	Corkery, Peter, Waltz, Kayley E., Eckhert, Patrick M., Ahmad, Mueed, Kraetz, Andrea, Miao, Yurun, Lee, Dennis T., Abdel‐Rahman, Mohammed K., Lan, Yucheng, Haghi‐Ashtiani, Paul, Stein, Aaron, Boscoboinik, J. Anibal, Tsapatsis, Michael, Fairbrother, D. Howard
Format:	Artikel
Sprache:	eng
Schlagworte:	dry development dry etching electron beam lithography electron beam resist high‐resolution patterning Low temperature molecular layer deposition solvent‐free Vapor phases Zinc
Online-Zugang:	Volltext
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Zusammenfassung:	Zinc‐Imidazolate Films In article number 2311149, Michael Tsapatsis, D. Howard Fairbrother, and co‐workers report an all‐dry resist technology based on an amorphous zinc imidazolate metal‐organic framework deposited by atomic/molecular layer deposition and developed by low temperature gas phase etching, achieving resolution down to 22 nm. This methodology introduces a new direction for solvent‐free resist processing, enabling scalable, high‐resolution patterning techniques for advanced semiconductor fabrication.
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.202470069