Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

A novel innovative catalytic abrasive cluster prepared in the laboratory was used for tribochemical mechanical polishing of silicon carbide wafers, and the polishing performance of catalytic abrasive cluster was characterized. Comparison of tribochemical mechanical polishing using Al 2 O 3 abrasive, iron-based white corundum mixed abrasive and catalytic abrasive cluster to study the material removal mechanism of catalytic abrasive cluster on silicon carbide workpieces. Quanta 200 scanning electron microscope (SEM) and Oxford INCA 250 energy-dispersive spectrometer (EDS) and x-ray diffraction (XRD) diffractometer were used to observe the surface, analyze the elements, and determine the composition of silicon carbide workpiece after tribochemical mechanical polishing. The experimental result shows that oxygen is produced in the tribochemical mechanical polishing of silicon carbide by catalytic abrasive cluster, which makes the silicon carbide surface generates SiO 2 shear film that is easy to be removed. Comparing with iron-based white corundum mixed abrasive and Al 2 O 3 abrasive, the catalytic abrasive cluster has better processability for 6H-SiC, and the material removal rate can reach to 42.928 nm/min.