Resistivity size effect in epitaxial face-centered cubic Co(001) layers

Resistivity size effect in epitaxial face-centered cubic Co(001) layers

Metastable face-centered cubic (fcc) Co layers are deposited by reactive magnetron sputtering in 5 mTorr N2 at 400 °C followed by vacuum annealing at 500 °C. The resulting phase-pure Co(001)/MgO(001) layers contain negligible nitrogen and exhibit a surface roughness

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Veröffentlicht in:Applied physics letters 2024-03, Vol.124 (12)
Hauptverfasser: Thakral, Anshuman, Jog, Atharv, Gall, Daniel
Format: Artikel
Sprache:eng
Schlagworte:
Electrical resistivity
Epitaxial growth
First principles
Magnetron sputtering
Room temperature
Size effects
Substrates
Surface roughness
Vacuum annealing
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Zusammenfassung:Metastable face-centered cubic (fcc) Co layers are deposited by reactive magnetron sputtering in 5 mTorr N2 at 400 °C followed by vacuum annealing at 500 °C. The resulting phase-pure Co(001)/MgO(001) layers contain negligible nitrogen and exhibit a surface roughness
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0190905