Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films
The effect of the gaseous medium composition on the electrically conductive properties of In 2 O 3 –Ga 2 O 3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In 2 O 3 –Ga 2 O 3 films exhibit high sensitivity to H 2 , NH 3 and possess hyphen pe...
Gespeichert in:
| Veröffentlicht in: | Technical physics letters 2023-12, Vol.49 (Suppl 3), p.S222-S226 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The effect of the gaseous medium composition on the electrically conductive properties of In
2
O
3
–Ga
2
O
3
films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In
2
O
3
–Ga
2
O
3
films exhibit high sensitivity to H
2
, NH
3
and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In
2
O
3
–Ga
2
O
3
films to gases is proposed. |
|---|---|
| ISSN: | 1063-7850 1090-6533 |
| DOI: | 10.1134/S1063785023900844 |