On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As Heterostructure

The effect of ion energy in a focused ion beam in the range 12–30 keV on the formation depth of nonradiative recombination centers during etching of the Al 0 . 18 Ga 0 . 82 As/GaAs/Al 0 . 18 Ga 0 . 82 As double heterostructure has been studied. It is shown that an increase in the ion energy leads to an increase in the concentration and propagation depth of radiation defects. It was found that during etching of focused ion beam with ion energies above 15 keV, the depth of formation of radiation defects exceeds 900 nm, which does not correspond to the calculations in the Stopping and Range of Ions in Matter.