The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p -type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-05, Vol.57 (5), p.268-271
Hauptverfasser: Sobolev, N. A., Kalyadin, A. E., Shtel’makh, K. F., Shek, E. I., Sakharov, V. I., Serenkov, I. T.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Argon
Diffusion rate
Excitation
Liquid helium
Luminescence
Magnetic Materials
Magnetism
Oxygen
Photoluminescence
Physics
Physics and Astronomy
Precipitates
Silicon
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Zusammenfassung:Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p -type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000°C. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782623070187