Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

The temperature dependences of the sputtering of negative ions of dimers and trimers of a Si(111) single crystal upon bombardment with cesium ions are studied for the first time by ultra-high-vacuum secondary-ion mass spectrometry. The sputtering temperature thresholds for the silicon dimer and trim...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2023-12, Vol.17 (Suppl 1), p.S413-S415
Hauptverfasser:	Atabaev, B. G., Dzabbarganov, R., Yuzikaeva, F. R., Permukhamedova, M. A., Shaymardanov, Z. Sh, Khalmatov, A. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cesium ions Chemistry and Materials Science Dimers Ion bombardment Materials Science Negative ions Secondary ion mass spectrometry Silicon Single crystals Sputtering Superstructures Surfaces and Interfaces Thin Films Trimers
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Beschreibung
Zusammenfassung:	The temperature dependences of the sputtering of negative ions of dimers and trimers of a Si(111) single crystal upon bombardment with cesium ions are studied for the first time by ultra-high-vacuum secondary-ion mass spectrometry. The sputtering temperature thresholds for the silicon dimer and trimer are measured, and a model is developed for the sputtering of adsorbed atoms and the silicon dimer of the 7 × 7-Si(111) superstructure.
ISSN:	1027-4510 1819-7094
DOI:	10.1134/S1027451023070042