One-step dual-additive passivated wide-bandgap perovskites to realize 44.72%-efficient indoor photovoltaics

The reduction of bulk trap defects in bromine-rich wide-bandgap (WBG) perovskites is crucial to enhancing open-circuit voltage ( V oc ) and fill factor (FF) towards high-performance indoor photovoltaics (IPVs). Here, we report one-step processed composite-based WBG perovskite adducts by adding oleylammonium iodide solution in trichloromethane as dual additives to the WBG perovskite precursors. The incorporation of a trace amount of dual additives enables a high-quality and less defective WBG perovskite film with mitigated halide segregation, leading to the suppression of bulk trap-induced non-radiative recombination losses. The NiO x -based inverted champion cell under one-sun illumination generates a record power conversion efficiency (PCE) of 21.97%, an impressive FF of 83.4%, a J sc of 21.56 mA cm −2 , and a V oc of 1.25 V for 1.71-electon-volt WBG perovskites. Such devices also show high operational stability over 800 hours during T 95 lifetime measurements. Our cells under U30 light with 1000 Lux (338.2 μW cm −2 ) can obtain a certified record PCE of 44.72% with a high V oc of 1.069 V and an FF of 82.3%. This is, to our knowledge, the best reported certified performance for perovskite-based IPVs. A one-step dual-additive strategy enables high-quality wide-bandgap perovskite films with efficient defect passivation, resulting in a certified record PCE of 44.72%, with a high V oc of 1.069 V, and an FF of 82.3% under U30 light.