Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory

In this work, unipolar resistive switching (RS) is demonstrated in a Ni/p-NiO/n + -Si heterojunction device based on the formation/rupture of conducting filaments (CFs). The potential barrier of the pn heterostructure can effectively increase the device initial resistance, with the benefit of low po...

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