Effect of processing temperature on structural and electrical properties of lead-free K0.5Bi0.5TiO3 piezoelectric ceramics synthesized by sol-gel technique

In this paper, potassium bismuth titanate (KBT) ceramics were prepared by sol-gel technique. The structural and electrical properties were investigated at different calcination and sintering temperatures. The single phase tetragonal structure was confirmed by X-ray diffraction pattern using Rietveld refinement. Raman analysis revealed changes in scattering mode of KBT ceramics with rise in processing temperature. Dielectric characterizations have been performed as a function of temperature. The ferroelectric nature of KBT ceramics is studied by automatic P-E loop tracer which reveals saturation polarization leading to a superior ferroelectric behavior. The values of d 33 charge coefficients observed at different sintering temperatures were 224, 245 and 276 pC/N. Graphical Abstract This graphical abstract represents value of piezoelectric charge coefficient value (d 33 ) increases with increase in sintering temperature. Raman spectroscopy analysis discloses its tetragonal phase structure without any secondary phases. The piezoelectric charge coefficient (d 33 ) values of KBT ceramics are 224, 245 and 276 pC/N at different sintering temperature 950 °C, 1000 °C and 1050 °C, respectively. Highlights X-ray diffraction study revealed pure phases of tetragonal structure of KBT ceramics. Raman analysis revealed changes in the scattering mode of KBT ceramics at different sintering temperatures. P-E loop reveals saturation in its traces leading to good ferroelectric behavior of KBT ceramics. High value of d 33 coefficients i.e., 224, 245 and 276 pC/N were observed at different sintering temperatures.