Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

Molybdenum disulfide (MoS 2 ) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS 2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS 2 -based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS 2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS 2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS 2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS 2 FETs. Finally, we focus on the advances in fabricating MoS 2 FETs with ALD high-κ gate dielectrics on MoS 2 , as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.