Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

Bismuth ferrite (Bi 2 Fe 4 O 9 ) thin films were grown on p-type Si (100) substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase (56–130 nm) with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker’s hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi 2 Fe 4 O 9 thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.