Growth of high-quality langatate crystals by the Czochralski method with elimination of Ga2O3 volatilization

Langatate (La3Ga5.5Ta0.5O14, LGT) crystals have attracted significant attention due to their excellent piezoelectric properties. However, the volatilization of Ga2O3 during the traditional Czochralski (Cz) growth often hinders the preparation of high-quality LGT crystals. This work replaced the iridium crucible with a platinum crucible and successfully grew an LGT crystal with a diameter of 60 mm under an air atmosphere by the Cz method, effectively eliminating Ga2O3 volatilization. The full width at half maximum of the rocking curve is 25.2′′, and the transmission is 80%. After annealing in Ar at 1100 °C, the resistivity increases to 1.2 × 108 Ω cm at 560 °C. This work has great potential for growing high-quality LGT crystals for use in high-temperature piezoelectric sensors.