A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications

Magnetite nanoparticles (α-Fe 3 O 4 ) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe 3 O 4 by Cu 2+ dopant for the modification in electrical properties was deliberated. As the Cu 2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76–1.83 eV by enhancing Cu 2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10 −5 to 9.17 × 10 −6 ℧ cm −1 . The obtained consequences revealed that desired properties of Cu +2 doped Fe 3 O 4 NPs can be obtained by controlling the substituting content in host material. The Fe 3 O 4 NPs with Cu 2+ doping exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photodetector, sensors and energy storage devices. Graphical Abstract Highlights Modification in electrical properties of α-Fe 3 O 4 by Cu 2+ dopant for the modification in electrical properties was deliberated. As the Cu 2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 nm to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76 to 1.83 eV by enhancing Cu 2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10 −5 to 9.17 × 10 −6 ℧ cm −1 . The obtained consequences revealed that desired properties of Cu +2 doped Fe 3 O 4 NPs can be obtained by controlling the substituting content in host material. The Fe 3 O 4 NPs with Cu 2+ doping exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photo-detector, sensors and energy storage devices.