Investigation of the Reactive Capability of the por-Si/Pd Structure in Relation to Ethanol Vapor

Semiconductor-based resistive gas sensors are currently the most used type of ethanol vapor sensors. The use of porous silicon, e.g., por-Si/Pd, formed by metal-assisted etching as a sensitive structure, makes it possible to form a sensitive element and an electronic binding in a single technological process. In this paper the possibility of forming resistive gas sensors by the metal-assisted chemical etching of silicon is shown. Experimental samples based on porous silicon of the p - and n -type of conduction are formed. An empirical explanation of the mechanism of the studied structures’ sensitivity to ethanol is presented. The possibility of forming a sensitive structure and electronic binding in a single technological process is shown.