Computational analysis on the role of an AGT current enhancer in a CZTS-based thin film solar cell

This paper gives a synopsis of a CZTS-based n-CdS/p-CZTS/p + -AgGaTe 2 /p ++ -MoS 2 thin film solar cell that has been designed and explored by the simulation technique with the help of a solar cell capacitance simulator (SCAPS-1D). The design utilizes CdS as the window layer, CZTS as the first absorber layer, AgGaTe 2 as the second absorber layer, and MoS 2 as the BSF layer. The influencing parameters of these materials such as thickness, doping concentration, and defect density have been adjusted to achieve the right balance between the proposed structure and to see the changes that affect the device's overall performance. In ideal condition, the single n-CdS/p-CZTS heterojunction structure shows power conversion efficiency (PCE) of 17.75% with short circuit current, J SC of 24.82 mA/cm 2 , open circuit voltage, V OC of 0.88 V and fill factor (FF) of 81.3%. But, with the inclusion of MoS 2 as the BSF, the overall PCE is elevated to 25.84% with V OC of 1.09 V, J SC of 26.96 mA/cm 2 and FF of 87.64%. Finally, with the fusion of AgGaTe 2 as a current augmenting layer the J SC gets a huge boost and is enhanced to 34.7 mA/cm 2 with a PCE of 33.89%. These simulation findings unveil the potential of the proposed solar cell structure with CZTS as the absorber layer and AgGaTe 2 as the current boosting layer in creating an environment-friendly, affordable and highly efficient thin film solar cell.