Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire

A design and topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped Al x Ga 1– x As quantum nanow...

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Veröffentlicht in:	Russian microelectronics 2023-12, Vol.52 (6), p.483-492
Hauptverfasser:	Pozdnyakov, D. V., Borzdov, A. V., Borzdov, V. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Current voltage characteristics Electrical Engineering Electron transport Engineering Field effect transistors Nanowires Semiconductor devices Transistors Tunnels
Online-Zugang:	Volltext
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