Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire

A design and topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped Al x Ga 1– x As quantum nanowire located in an Al 2 O 3 matrix. For the given geometry of the device structure, the optimum of the fraction of aluminum in the semiconductor composition varying along the transistor channel is found, at which, unlike a conventional tunnel field-effect transistor, not only is the complete suppression of the quantum barrier for electrons by a positive gate voltage ensured but also the minimum possible electrical resistance of the transistor channel is achieved. The current-voltage characteristics of the transistor are calculated within the framework of a rigorous quantum-mechanical description of the electron transport in its channel, taking into account the nonparabolic nature of the band structure of the semiconductor.