High linearity multi-band CMOS low noise amplifier at 2.4/3.5 GHz for 4G/5G applications

This paper presents a high linearity multi-band CMOS low noise amplifier (LNA) at 2.4/3.5 GHz for wireless application. The proposed multi-band CMOS LNA is targeted for concurrent 2.4 GHz and 3.5 GHz bands for 4G and 5G wireless technology, respectively. A cascoded topology with bandpass and bandstop filter at the input is utilized to achieve multiple-band frequency at 2.4 GHz and 3.5 GHz. The LNA is implemented and simulated using CMOS 0.13 µm process in Cadence Virtuoso Analog Design Environment software. The simulation results indicate that the gain (S21) of 15 dB/11 dB with the third order intercept point (IIP3) of 2.04 dBm/3.80 dBm at 2.4 GHz/3.5 GHz frequencies are achieved. Meanwhile, the noise figure of 3.0 dB/3.6 dB is obtained with the power consumption of 35.1 mW at 1.0 V supply voltage. The total chip area is 2.61 mm2.