Auto-Configuration Write Scheme With Enhanced Reliability for 3-D Cross-Point PCM
3-D cross-point phase-change memory (PCM) is considered one of the most promising candidates for storage-class memory. However, coupled IR drop and leakage currents cause multidimensional non-uniformity of cell effective current. The conventional circuit adopts the worst-case write current to the wh...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2024-02, Vol.71 (2), p.857-861 |
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| container_title | IEEE transactions on circuits and systems. II, Express briefs |
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| creator | Zhang, Guangming Lei, Yu Song, Zhitang Yu, Qiuyao Chen, Houpeng |
| description | 3-D cross-point phase-change memory (PCM) is considered one of the most promising candidates for storage-class memory. However, coupled IR drop and leakage currents cause multidimensional non-uniformity of cell effective current. The conventional circuit adopts the worst-case write current to the whole array, which increases the write disturbance (WD) and decreases the endurance. This limits the scalability and reliability of 3-D PCM. In this brief, we propose an auto-configuration write scheme to improve the reliability of 3-D cross-point PCM by mitigating multidimensional non-uniformity of cell effective current. The evaluation results show that the proposed auto-configuration write scheme can reduce the WD error probability from 14.95% to 0.01%, as well as improve the endurance by 6.49 times, compared with the conventional fixed write current scheme. |
| doi_str_mv | 10.1109/TCSII.2023.3311463 |
| format | Article |
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However, coupled IR drop and leakage currents cause multidimensional non-uniformity of cell effective current. The conventional circuit adopts the worst-case write current to the whole array, which increases the write disturbance (WD) and decreases the endurance. This limits the scalability and reliability of 3-D PCM. In this brief, we propose an auto-configuration write scheme to improve the reliability of 3-D cross-point PCM by mitigating multidimensional non-uniformity of cell effective current. 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The evaluation results show that the proposed auto-configuration write scheme can reduce the WD error probability from 14.95% to 0.01%, as well as improve the endurance by 6.49 times, compared with the conventional fixed write current scheme.</description><subject>Circuits</subject><subject>Configurations</subject><subject>endurance</subject><subject>Integrated circuit interconnections</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>line resistance</subject><subject>Nonuniformity</subject><subject>Phase change materials</subject><subject>Phase-change memory</subject><subject>Programming</subject><subject>Reliability</subject><subject>Resistance</subject><subject>Solid modeling</subject><subject>Voltage</subject><subject>write disturbance</subject><issn>1549-7747</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1PwjAYxxujiYh-AeOhiedi31jXI5moJBhRMBybrmulBFbsugPf3k08eHqew_8tPwBuCR4RguXDqljOZiOKKRsxRgjP2BkYkPE4R0xIct7_XCIhuLgEV02zxZhKzOgAvE_aFFARaue_2qiTDzVcR58sXJqN3Vu49mkDp_VG18ZW8MPuvC79zqcjdCFChh5hEUPToEXwdYKL4vUaXDi9a-zN3x2Cz6fpqnhB87fnWTGZI0O5SEjTnFWEEVORboxgmXRcCIdLk4ncOM3HNLOad_MNLnFeWSMdNZpgak1JqWRDcH_KPcTw3domqW1oY91VKiopI10L7lX0pDL9ymidOkS_1_GoCFY9OvWLTvXo1B-6znR3Mnlr7T8DZXnOCfsBftppEQ</recordid><startdate>20240201</startdate><enddate>20240201</enddate><creator>Zhang, Guangming</creator><creator>Lei, Yu</creator><creator>Song, Zhitang</creator><creator>Yu, Qiuyao</creator><creator>Chen, Houpeng</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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II, Express briefs</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhang, Guangming</au><au>Lei, Yu</au><au>Song, Zhitang</au><au>Yu, Qiuyao</au><au>Chen, Houpeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Auto-Configuration Write Scheme With Enhanced Reliability for 3-D Cross-Point PCM</atitle><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle><stitle>TCSII</stitle><date>2024-02-01</date><risdate>2024</risdate><volume>71</volume><issue>2</issue><spage>857</spage><epage>861</epage><pages>857-861</pages><issn>1549-7747</issn><eissn>1558-3791</eissn><coden>ITCSFK</coden><abstract>3-D cross-point phase-change memory (PCM) is considered one of the most promising candidates for storage-class memory. However, coupled IR drop and leakage currents cause multidimensional non-uniformity of cell effective current. The conventional circuit adopts the worst-case write current to the whole array, which increases the write disturbance (WD) and decreases the endurance. This limits the scalability and reliability of 3-D PCM. In this brief, we propose an auto-configuration write scheme to improve the reliability of 3-D cross-point PCM by mitigating multidimensional non-uniformity of cell effective current. The evaluation results show that the proposed auto-configuration write scheme can reduce the WD error probability from 14.95% to 0.01%, as well as improve the endurance by 6.49 times, compared with the conventional fixed write current scheme.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSII.2023.3311463</doi><tpages>5</tpages><orcidid>https://orcid.org/0009-0003-0581-3035</orcidid><orcidid>https://orcid.org/0000-0002-5766-5746</orcidid><orcidid>https://orcid.org/0000-0003-4321-0385</orcidid><orcidid>https://orcid.org/0000-0001-7859-9429</orcidid></addata></record> |
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| ispartof | IEEE transactions on circuits and systems. II, Express briefs, 2024-02, Vol.71 (2), p.857-861 |
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| subjects | Circuits Configurations endurance Integrated circuit interconnections Leakage current Leakage currents line resistance Nonuniformity Phase change materials Phase-change memory Programming Reliability Resistance Solid modeling Voltage write disturbance |
| title | Auto-Configuration Write Scheme With Enhanced Reliability for 3-D Cross-Point PCM |
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