Auto-Configuration Write Scheme With Enhanced Reliability for 3-D Cross-Point PCM

3-D cross-point phase-change memory (PCM) is considered one of the most promising candidates for storage-class memory. However, coupled IR drop and leakage currents cause multidimensional non-uniformity of cell effective current. The conventional circuit adopts the worst-case write current to the whole array, which increases the write disturbance (WD) and decreases the endurance. This limits the scalability and reliability of 3-D PCM. In this brief, we propose an auto-configuration write scheme to improve the reliability of 3-D cross-point PCM by mitigating multidimensional non-uniformity of cell effective current. The evaluation results show that the proposed auto-configuration write scheme can reduce the WD error probability from 14.95% to 0.01%, as well as improve the endurance by 6.49 times, compared with the conventional fixed write current scheme.