RF and linearity analysis of gate engineered dual heterojunction charge plasma TFET with improved ambipolarity

In this article, the impact of dual heterojunction in charge plasma TFET has been investigated in terms of DC, RF and linearity analysis. Using higher bandgap material on the drain side, the gate engineered Ge-GaAs-Al 0.3 Ga 0.7 As dual heterojunction charge plasma TFET (GE-DHJ-CPTFET) achieved ∼ 10 4 times lower ambipolar current than the Ge-GaAs Heterojunction Charge Plasma TFET. In addition, the proposed design achieved excellent DC and RF/analog performance, resulting in an on-state current (I on ) of 2.85 × 10 −4 A/ μ m, subthreshold swing (SS) of 16.56 mV/decade, threshold voltage (V th ) of 0.295 V, I on /I off of 3.53 × 10 13 , maximum transconductance (g m ) of 8.86 × 10 −4 S/ μ m, peak cutoff frequency (f t ) of 1.43 THz, and a peak gain bandwidth product (GBP) of 0.143 THz. The device linearity is corroborated by sustained performance in third-order transconductance (g m3 ), second-order voltage interception point (VIP2), third-order voltage interception point (VIP3), 3third-order input intercept point (IIP3) and third-order intermodulation distortion (IMD3). Superior ambipolar current reduction, along with its overall device performance, makes the GE-DHJ-CPTFET a viable alternative for high-frequency RF applications.