Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor

This article presents beta‐gallium oxide (β‐Ga2O3) micro electro mechanical systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone bridge configuration. The MEMS model is simulated from 0 Pa to 50 kPa,...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-02, Vol.221 (3), p.n/a
Hauptverfasser:	Than, Phuc Hong, Dao, Tuan Ngoc, Takaki, Yasushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Configurations Gallium oxides high temperature Mathematical models micro electro mechanical systems (MEMS) Microelectromechanical systems Pressure sensors Sensitivity enhancement Simulation Strain gauges Wheatstone bridges β-Ga2O3, finite element analysis
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