Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor

This article presents beta‐gallium oxide (β‐Ga2O3) micro electro mechanical systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone bridge configuration. The MEMS model is simulated from 0 Pa to 50 kPa, resulting in an output signal range of −3–16 mV and a responsivity of 0.38 mV kPa−1. The simulation also shows that as temperature increases, the resistance of the piezoresistive material in the MEMS decreases, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga2O3‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future. This article presents the demonstration of Micro Electro Mechanical Systems (MEMS) based Ga2O3 pressure sensor. Modeling and simulation were performed by using COMSOL software. The simulation results show the robust pressure‐sensing properties of Ga2O3 film on a silicon substrate. The effects of temperature characteristics, electrode material selection, thickness, and the influence of conductivity on the response of the sensor are also introduced.