Determination of Commercial Silicon Diode (4007IN) Parameters from the I–V and P-V Characteristics

A simple method is presented for determining the four diode parameters of the single exponential model of a silicon commercial diode, namely: Is reverse saturation current, n diode ideality factor, R s series resistance and G p shunt conductance. The current-voltage and power-voltage curves of the corresponding commercial diode are calculated and simulated via the exact explicit analytical solutions. By the use of the Lambert W function in its Padé-type approximation and the the FindFit function in the Mathematica software package, the four parameters were extracted. The fitted current-voltage, power-voltage curves and the corresponding experimental data are in good agreement. Also we provided the Padé-type approximation expression for Lambert W function.