Silicon Material Based Tunnel FET for Controlling Ambipolar Current

This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In Conventional Tunnel Field Effect Transistor (TFET) the barrier width of tunneling at source-channel and channel-drain region is supervised by voltage a...

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Veröffentlicht in:	SILICON 2022-08, Vol.14 (12), p.6713-6718
Hauptverfasser:	Bala, Shashi, Singh, Harpal, Kamboj, Priyanka, Raj, Balwant
Format:	Artikel
Sprache:	eng
Schlagworte:	Biomolecules Charge density Chemistry Chemistry and Materials Science Electric potential Environmental Chemistry Field effect transistors Inorganic Chemistry Lasers Materials Science Optical Devices Optics Original Paper Parameters Permittivity Photonics Polymer Sciences Semiconductor devices Silicon Simulation Thickness Transistors Tunnels Voltage
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