Silicon Material Based Tunnel FET for Controlling Ambipolar Current

This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In Conventional Tunnel Field Effect Transistor (TFET) the barrier width of tunneling at source-channel and channel-drain region is supervised by voltage at gate. The gate-drain overlapped, restricts the effect of gate voltage to source-channel region, resulting in minimization of ambipolar current. Also, irregular overlapping of gate on drain further helps to accomplish minimum ambipolar current. The effects of device parameters such as gate-on-drain overlapping, oxide thickness on drain current, drain doping, gate dielectric thickness, gate dielectric constant have been observed through simulation. This paper examines the performance of TFET at charge density by varying biasing condition, and different dielectric constant for biomolecule sensing applications.