Fabrication and Electrical Characteristics of Thioindigo/Silicon Heterojunction

We demonstrate the performance of heterojunction thin films of thioindigo on Silicon which fabricated by using thermal evaporation technique under high vacuum (10 − 4 Pa). The dark current–voltage (I–V) characteristics measurement at different temperatures in the range 303–383 K were analyzed in order to explain the conduction mechanism and to evaluate the important device parameters The calculated ideality factor (n) and zero-bias barrier height ( φ o ) showed strong bias dependence. The predominant mechanism of charge transport in thioindigo on silicon was found to be thermionic emission at low voltage and space charge limited conduction, SCLC dominated by single trap distribution at the higher voltage. At reverse applied voltage, it is found that p-Si is the main source of the reverse current due to generation-recombination. The capacitance–voltage (C–V) characteristics of in these devices were measured at high frequency (1 MHz). The dependence of C − 2 vs. V for the heterojunctions for thioindigo/Si was found to be almost linear which indicates an abrupt heterojunction and (C-V) parameters was obtained. The parameter of I–V characteristics under white illumination was calculated.