Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications

In the present work, dual material gate design and retrograde doping has been implemented on lateral β-Ga 2 O 3 MOSFET with the aim to improve Power Figure of Merit (PFoM) as well as to achieve superior device performance for high power and Radio Frequency (RF) applications. Various analog metrics such as drain current (I d ), transconductance (g m ) and output conductance (g d ) etc., have been analyzed using TCAD Silvaco and breakdown voltage has also been extracted to examine the efficacy of device for aforementioned applications. Furthermore, in order to assess the effectiveness of the proposed device design, the characteristics have also been compared with those obtained for conventional β-Ga 2 O 3 MOSFET. In addition, RF parameters such as intrinsic capacitances, cut-off frequency, Transconductance Frequency Product (TFP) and Gain Bandwidth Product (GBP) etc., have also been evaluated and compared for both devices. It is demonstrated that the proposed device exhibits tremendous improvement in breakdown voltage along with remarkably high power figure of merit.