Physical Characterizations of 3-(4-Methyl Piperazinylimino Methyl) Rifampicin Films for Photodiode Applications

Rifampicin (RIF) films were prepared. X-ray diffraction (XRD) patterns showed monoclinic structure of powder Rifampicin. While XRD patterns showed nanocrystalline structure of the thin films. The nanostructure character of Rifampicin films is confirmed by using high resolution transmission electron microscope (HRTEM). Spectrophotometric method was used to measure the intensity of transmitted and reflected light in Rifampicin films to determine optical parameters. The allowed indirect transitions are found in Rifampicin films with energy gap of 1.9 eV . I-V characteristics of Au/Rifampicin/p-Si/Al were measured in different conditions. Under illumination, the device shows photoinduced charge transfer which suggests that, the fabricated device can be used as photodiode. The value of photoresponsivity of the diode is increases with increasing light intensity.