Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications

Two-dimensional numerical simulation on axisymmetric directional solidification furnace has been carried out to investigate the growth of mono-like silicon ingot. The silicon ingots were grown in conventional crucible and modified crucibles with Plano-Concave bottom. Four different crucibles with the thickness variation of 5 mm, 10 mm, 15 mm and 20 mm at the bottom center of the crucible were used for the simulation. The thermal field of the grown ingots were analysed during the growth process. The effect of the modification at the crucible bottom on the outward heat flux has been investigated and the melt-crystal interface was analysed during the growth process. The distribution of thermal stress and shear stress in the grown ingots was investigated. The results show that the modified crucible with Plano-Concave bottom gives better melt-crystal interface by enhancing the spot cooling and lead to lower shear stress and lower thermal stress in the grown ingot which can be used for photovoltaic applications.